Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
Cleaning of Glass Disk in Oxygen Plasma by Using Compact Electron-Beam-Excited Plasma Source
复制标题
紧凑型电子束激发等离子体源在氧等离子体中清洗玻璃盘
DOI：
10.1143/jjap.41.6553
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发表时间：
2002
影响因子：
1.5
通讯作者：
T. Goto
中科院分区：
文献类型：
--
作者：
S. Tada;Masafumi Ito;M. Hamagaki;M. Hori;T. Goto
我们将一种紧凑的电子束激发等离子体（EBEP）源应用于玻璃圆盘的清洁过程。由于EBEP使我们能够通过改变电子束能量来控制浮动衬底上的离子鞘偏压，因此可以在不施加附加偏压电源（如RF）的情况下确定衬底离子轰击能量以执行反应离子蚀刻（RIE）。源系统已经在几个方面进行了修改，以便它可以在O2等离子体中可靠地使用很长时间。为了评价源系统的清洗能力，对碳膜的腐蚀性能进行了研究。结果表明，随着电子束电流和电子加速电压的增加，刻蚀速率增大。在Va为100 V， Ia为2.5 A时，刻蚀速率可达4 nm/s。
We have applied a compact electron-bean-excited plasma (EBEP) source to the cleaning process for a glass disk. Since the EBEP enables us to control the ion sheath bias on the floating substrate by changing the electron-beam energy, the substrate ion bombardment energy to perform a reactive ion etching (RIE) can be determined without applying additional bias power supply such as RF. The source system has been modified in several ways so that it can be reliably used in the O2 plasma for a long time. In order to evaluate the cleaning capability of the source system, the etch performance of carbon film was investigated. It was found that the etching rate increased with electron-beam current and electron acceleration voltage. The etch rate of 4 nm/s was obtained at Va of 100 V and Ia of 2.5 A.