720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
720-V/0.35-m $\Omega \cdot$ cm2 Fully Vertical GaN-on-Si Power Diodes by Selective Removal of Si Substrates and Buffer Layers
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DOI：
10.1109/led.2018.2819642
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发表时间：
2018-03
影响因子：
4.9
通讯作者：
Yuhao Zhang;M. Yuan;N. Chowdhury;K. Cheng;T. Palacios
中科院分区：
文献类型：
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作者：
Yuhao Zhang;M. Yuan;N. Chowdhury;K. Cheng;T. Palacios
这封信展示了一种制造具有最先进性能的全垂直GaN-on-Si功率二极管的新技术。选择性地去除Si衬底和缓冲层，并在延伸到n+-GaN层的背面沟槽中形成底部阴极。在这种新型的全垂直GaN-on-Si p-n二极管中，特定的差分导通电阻为0.35-0.4（归一化到总器件面积），击穿电压为720 V，使得Baliga优值超过1.5 GW/cm2。这些结果创造了国外衬底上所有垂直GaN功率二极管性能的新记录，并证明了通过选择性去除Si衬底和缓冲层来制造完全垂直GaN-on-Si功率二极管和晶体管的可行性。
This letter demonstrates a novel technology to fabricate fully vertical GaN-on-Si power diodes with state-of-the-art performance. Si substrate and buffer layers were selectively removed and the bottom cathode was formed in the backside trenches extending to an n+-GaN layer. A specific differential ON-resistance of 0.35–0.4 $\text{m}\Omega \cdot $ cm2 (normalized to the total device area) and a breakdown voltage of 720 V were demonstrated in this novel fully vertical GaN-on-Si p-n diode, rendering a Baliga’s figure of merit over 1.5 GW/cm2. These results set a new record performance in all vertical GaN power diodes on foreign substrates, and demonstrate the feasibility of making fully vertical GaN-on-Si power diodes and transistors by selective removal of Si substrates and buffer layers.