Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths: (OSDA).
Simultaneous Measurement of Size and Depth of Each Defect in a Silicon Wafer Using Light Scattering at Two Wavelengths: (OSDA).
复制标题
使用两种波长的光散射同时测量硅晶片中每个缺陷的尺寸和深度：(OSDA)。
DOI：
10.1380/jsssj.22.323
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发表时间：
2001
期刊：
影响因子：
--
通讯作者：
K. Takeda
中科院分区：
文献类型：
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作者：
K. Takeda
为了检测待制造器件的硅片表面区域的质量，研制了一种称为光学浅缺陷分析仪（OSDA）的仪器。OSDA可以通过在Si中具有不同穿透深度的两个波长下测量来自每个缺陷的散射光来估计缺陷的尺寸和深度。OSDA测量的原理是基于Beer-Lambert定律。本文就OSDA测量的有效性、局限性及其应用作一综述。通过透射电镜观察OSDA检测到的缺陷，验证了该方法的有效性。应用范围包括各种直拉硅单晶片和外延片中生长缺陷的测量，以及内部缺陷和表面凹坑（如热氧化引起的晶体起源颗粒（COP））的鉴别。
In order to inspect quality of the silicon wafer surface region where devices are to be fabricated, an instrument named Optical Shallow Defect Analyzer (OSDA) was developed. The OSDA can estimate the size and depth of the defect by measuring scattered light from each defect at two wavelengths having different penetration depths in Si. The principle of OSDA measurement is based on the Beer-Lambert law. In this review, the validity, the limitation and applications of the OSDA measurement are described. The validity were checked by TEM observation of the defects detected with OSDA. The applications include measurements of grown-in defects in various Czochralski (CZ) Si wafers and epitaxial wafer, and discrimination between inner defects and surface pits, e.g. crystal originated particles (COPs) induced by thermal oxidation.