Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
Growth of Core-Shell InP Nanowires for Photovoltaic Application by Selective-Area Metal Organic Vapor Phase Epitaxy
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DOI：
10.1143/apex.2.035004
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发表时间：
2009-03-01
影响因子：
2.3
通讯作者：
Fukui, Takashi
中科院分区：
文献类型：
--
作者：
Goto, Hajime;Nosaki, Katsutoshi;Fukui, Takashi
我们报告的形成核壳pn结InP纳米线使用无催化剂的选择性区域金属有机物气相外延（SA-MOVPE）方法。制备了周期性排列的致密核壳结构InP纳米线阵列，并将其用于光伏器件中。该器件的开路电压（V-OC）、短路电流（I-SC）和填充因子（FF）水平分别为0.43 V、13.72 mA/cm（2）和0.57，这表明在AM 1.5G照明下的太阳能转换效率为3.37%。本研究表明，高品质的核壳结构纳米线的制备是可能的SA-MOVPE和纳米线阵列可以用于集成纳米线光伏器件。(C)2009日本应用物理学会DOI：10.1143/APEX.2.035004
We report on the formation of core-shell pn junction InP nanowires using a catalyst-free selective-area metalorganic vapor-phase epitaxy (SA-MOVPE) method. A periodically aligned dense core-shell InP nanowire array was fabricated and used in photovoltaic device applications. The device exhibited open-circuit voltage (V-OC), short-circuit current (I-SC) and fill factor (FF) levels of 0.43 V, 13.72 mA/cm(2) and 0.57, respectively, which indicated a solar power conversion efficiency of 3.37% under AM1.5G illumination. This study demonstrates that high quality core-shell structure nanowire fabrication is possible by SA-MOVPE and that the nanowire arrays can be used in integrated nanowire photovoltaic devices. (C) 2009 The Japan Society of Applied Physics DOI: 10.1143/APEX.2.035004