A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel
A room-temperature silicon single-electron metal-oxide-semiconductor memory with nanoscale floating-gate and ultranarrow channel
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DOI：
10.1063/1.118236
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发表时间：
1997-02-17
影响因子：
4
通讯作者：
Chou, SY
中科院分区：
文献类型：
--
作者：
Guo, LJ;Leobandung, E;Chou, SY
我们已经展示了一种室温硅单电子晶体管存储器，它由(i)窄通道金属氧化物半导体场效应晶体管组成，其宽度（类似于10纳米）小于单电子的德拜筛选长度；（ii）纳米级多晶硅点（类似于7x7nm）作为嵌入通道和控制栅极之间的浮动栅极。我们观察到，在浮栅上存储一个电子可以显著地屏蔽控制栅上的电势通道，导致阈值电压的离散位移，充电电压与阈值位移之间的阶梯关系，以及自限制充电过程。(C) 1997年美国物理研究所。
We have demonstrated a room-temperature silicon single-electron transistor memory that consists of (i) a narrow channel metal-oxide-semiconductor field-effect transistor with a width (similar to 10 nm) smaller than the Debye screening length of single electron; and (ii) a nanoscale polysilicon dot (similar to 7x7 nm) as the floating gate embedded between the channel and the control gate. We have observed that storing one electron on the floating gate can significantly screen the channel from the potential on the control gate, leading to a discrete shift in the threshold voltage, a staircase relationship between the charging voltage and the threshold shift, and a self-limiting charging process. (C) 1997 American Institute of Physics.