Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method
Inverse Class-F AlGaN/GaN HEMT Microwave Amplifier Based on Lumped Element Circuit Synthesis Method
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DOI：
10.1109/tmtt.2008.2006803
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发表时间：
2008-10
影响因子：
4.3
通讯作者：
Yasuyuki Abe;R. Ishikawa;K. Honjo
中科院分区：
文献类型：
--
作者：
Yasuyuki Abe;R. Ishikawa;K. Honjo
提出了一种考虑三阶以上高次谐波频率的微波AlGaN/GaN HEMT反F类放大器集总元件设计方法。负载电路由串联电抗网络和并联电抗网络组成，串联电抗网络在奇次谐波频率处具有零阻抗，在偶次高次谐波频率处具有极点，并联电抗网络在奇次谐波频率处具有零阻抗。制作的AlGaN/GaN HEMT反F类放大器在879 MHz时的功率附加效率为76.3%，漏极效率为78.3%。
A lumped element design method considering more than third-order higher harmonic frequencies for a microwave AlGaN/GaN HEMT inverse class-F amplifier has been developed. The load circuit consists of a series reactance network having zero impedance at the odd order harmonic frequencies and poles at the even order higher harmonic frequencies as well as a shunt reactance network having zero impedance at the odd order harmonic frequencies. A fabricated AlGaN/GaN HEMT inverse class-F amplifier delivered a power-added efficiency of 76.3% and a drain efficiency of 78.3% at 879 MHz.