Electrically Enhanced Exchange Bias via Solid-State Magneto-ionics

Electrically Enhanced Exchange Bias via Solid-State Magneto-ionics
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DOI:
10.1021/acsami.1c11126
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发表时间:
2021-08-04
影响因子:
9.5
通讯作者:
Liu, Kai
Liu, Kai
中科院分区:
材料科学2区
文献类型:
--
作者:
Murray, Peyton D.;Jensen, Christopher J.;Liu, Kai

文献摘要

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电诱导离子运动提供了一种实现电压控制磁性的新方法,为新一代逻辑,传感器和数据存储技术打开了大门。在这里,我们展示了一种有效的方法来磁离子和电调谐的交换偏置在Gd/Ni 1-xCoxO薄膜(x = 0.50和0.67),其中没有单独的层在室温下是铁磁性的。沉积在反铁磁Ni 1-xCoxO上的Gd覆盖层引发固态氧化还原反应,该反应将氧化物的界面区域还原为铁磁NiCo。场冷却(FC)后建立交换偏置,在电压调节后可以增强高达35%,随后用第二个FC重置。这些影响是由界面铁磁NiCo层的存在下,进一步合金与Gd层后FC和电压的应用,证实了电子显微镜和极化中子反射研究。这些结果突出了固态磁离子方法实现交换偏置的电控制的可行性,具有节能磁离子装置的潜力。
Electrically induced ionic motion offers a new way to realize voltage-controlled magnetism, opening the door to a new generation of logic, sensor, and data storage technologies. Here, we demonstrate an effective approach to magneto-ionically and electrically tune the exchange bias in Gd/Ni1-xCoxO thin films (x = 0.50 and 0.67), where neither of the layers alone is ferromagnetic at room temperature. The Gd capping layer deposited onto antiferromagnetic Ni1-xCoxO initiates a solid-state redox reaction that reduces an interfacial region of the oxide to ferromagnetic NiCo. An exchange bias is established after field cooling (FC), which can be enhanced by up to 35% after a voltage conditioning and subsequently reset with a second FC. These effects are caused by the presence of an interfacial ferromagnetic NiCo layer, which further alloys with the Gd layer upon FC and voltage application, as confirmed by electron microscopy and polarized neutron reflectometry studies. These results highlight the viability of the solid-state magneto-ionic approach to achieve electric control of exchange bias, with potential for energy-efficient magneto-ionic devices.