Estimation of the Emission Barrier Height of p-Type Semiconducting Diamond from its Field Emission Property
Estimation of the Emission Barrier Height of p-Type Semiconducting Diamond from its Field Emission Property
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DOI：
10.1143/jjap.34.l1068
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发表时间：
1995-08
影响因子：
1.5
通讯作者：
K. Okano;S. Koizumi;J. Itoh
中科院分区：
文献类型：
--
作者：
K. Okano;S. Koizumi;J. Itoh
通过比较具有相同几何形状的金刚石场发射阵列（FEA）和钼（Mo）FEA的场发射特性，相对估算了p型半导体金刚石的发射势垒高度。在发射电流-阳极电压特性中，金刚石FEA的开启电压比钼FEA低。Fowler-Nordheim（F-N）图中金刚石FEA与Mo FEA的斜率比得出金刚石与Mo的发射势垒高度比为0.44 ±0.06。从所获得的比率，当假定Mo的功函数（4.24 eV）时，可以估计金刚石的发射势垒高度为1.87 ±0.26 eV。
The emission barrier height of p-type semiconducting diamond has been estimated relatively by comparing the field emission property of a diamond field emitter array (FEA) and a molybdenum (Mo) FEA having the same geometry. Diamond FEA showed lower turn-on voltage than Mo FEA in the emission current-anode voltage characteristics. The slope ratio of diamond FEA to Mo FEA in Fowler-Nordheim (F-N) plots yielded the emission barrier height ratio of the diamond to Mo as 0.44 ±0.06. From the obtained ratio, the emission barrier height of the diamond can be estimated to be 1.87 ±0.26 eV when the work function of Mo (4.24 eV) is assumed.