Analysis of Influencing Factors on Air-Stable Organic Field-Effect Transistors (OFETs)
Analysis of Influencing Factors on Air-Stable Organic Field-Effect Transistors (OFETs)
复制标题
DOI：
10.5755/j01.ms.24.2.18197
复制
发表时间：
2018-01-01
影响因子：
1
通讯作者：
Chi, Lifeng
中科院分区：
文献类型：
--
作者：
Pan, Yong;Lv, Aifeng;Chi, Lifeng
本文重点介绍了近20年来空气稳定型有机场效应晶体管（ofet）领域的主要进展。对影响ofet稳定性的因素，包括空气、湿度、氧气和温度的研究进行了综述和分析。总结了导致ofet降解的可能机制，如H2O分子的渗透、氧的掺杂效应或温度引起的晶体结构差异等。同时，分析了晶体管的场效应迁移率和通断电流比在不同环境下变化较大的原因。讨论了ofet传感器在检测二氧化氮和氨等有害气体中的总体寿命，并介绍了解决ofet不稳定问题的一些突破性发现和技术。
The primary emphasis in this paper is on the major developments in the field of air-stable organic field-effect transistors (OFETs) over the past 20 years. The studies about the factors influencing the stability of OFETs, including air, humidity, oxygen and temperature, are reviewed and analyzed. The possible mechanisms that result in the degradation of OFETs, such as the penetrating of H2O molecules, the doping effect of oxygen or the crystalline structure difference caused by temperature, are summarized. At same time, the reason why the field-effect mobility and the on/off current ratio of the transistor might change greatly with different ambient is concluded. The overall lives of OFET-based sensor in the detection of hazardous gases including nitrogen dioxide and ammonia are discussed, several breakthrough findings and technologies about how to solve the problem of instability of OFETs are also presented.