Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices
Lock-in Infrared Thermography: A tool to locate and analyse failures in power devices
复制标题
锁定红外热成像：定位和分析电力设备故障的工具
DOI：
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发表时间：
2017
期刊：
影响因子：
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通讯作者：
José Millan
中科院分区：
文献类型：
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作者：
M. Vellvehí;X. Perpiñà;J. Leon;D. Sánchez;Xavier Jordà;José Millan
在这项工作中，锁定红外热像仪(LIT)被认为是电力设备故障分析的有力工具。这些器件通过热手段在频域中进行电特性表征，以激活导致其不良行为的薄弱环节。作为案例研究，使用LIT技术检查了两种不同的功率器件：垂直双扩散MOS(VDMOS)和碳化硅钨接触肖特基势垒二极管(W-SBD)。垂直双扩散MOS(VDMOS)提供了较高的栅漏电流，而碳化硅肖特基势垒二极管(W-SBD)通过改变金属接触来改变肖特基势垒。
In this work, Lock-in Infrared Thermography (LIT) is presented as a powerful tool for failure analysis in power devices. These devices are electrically characterized in the frequency domain by thermal means to activate weak spots responsible for their misbehavior. As case studies, two different power devices are inspected using the LIT technique: a Vertical Double Diffused MOS (VDMOS) presenting an elevated gate leakage current and a SiC Schottky Barrier Diode with Tungsten contact (W-SBD) presenting a Schottky barrier modification by metal contact change.