Energy Harvesting Using Substrate Photodiodes
Energy Harvesting Using Substrate Photodiodes
复制标题
使用衬底光电二极管收集能量
DOI：
10.1109/tcsii.2014.2327371
复制
发表时间：
2014
期刊：
影响因子：
--
通讯作者：
W. Leon
中科院分区：
文献类型：
--
作者：
G. M. Pour;Mohammad K. Benyhesan;W. Leon
提出了一种能够从在标准互补金属氧化物半导体（CMOS）工艺中制造的衬底/阱光电二极管中收获能量的电路。使用衬底/阱光电二极管而不是扩散/阱光电二极管进行能量收集的动机是由于更深的结而增加的量子效率、寄生二极管效应的消除以及更好的硅面积利用率。此外，由于衬底光电二极管也可用作光传感器，因此它们为自供电图像传感器提供了新的解决方案。所提出的电路使用电感器将能量从光电二极管传输到负载，并在此过程中将相对较低的光电二极管电压提升到高电平。建议的能量收集电路的分析模型的开发。该模型用于深入了解限制转换效率的因素。作为概念验证，在0.5 μ mCMOS工艺中制造了测试微芯片。测试微芯片的测量验证了所提出的电路和开发的分析模型。
A circuit that is able to harvest energy from substrate/well photodiodes fabricated in standard complimentary metal-oxide-semiconductor (CMOS) processes is presented. The motivation for using substrate/well photodiodes over diffusion/well photodiodes for energy harvesting are the increased quantum efficiency due to deeper junctions, the elimination of the parasitic diode effect, and better silicon area utilization. Moreover, since substrate photodiodes also work as light sensors, they provide a new solution to self-powered image sensors. The proposed circuit uses an inductor to transfer energy from the photodiode to the load and, in the process, boosts the relatively low photodiode voltage to high levels. An analytical model of the proposed energy harvesting circuit is developed. The model is used to gain insight into the factors limiting the conversion efficiency. As a proof of concept, a test microchip was fabricated in the 0.5-μm CMOS technology. Measurements from the test microchip validate the proposed circuit and the developed analytical model.