Self-shielding: new high-voltage inter-connection technique for HVICs
Self-shielding: new high-voltage inter-connection technique for HVICs
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DOI：
10.1109/ispsd.1996.509488
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发表时间：
1996-05
期刊：
影响因子：
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通讯作者：
T. Fujihira;Y. Yano;S. Obinata;N. Kumagai;K. Sakurai
中科院分区：
文献类型：
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作者：
T. Fujihira;Y. Yano;S. Obinata;N. Kumagai;K. Sakurai
提出了一种新的、经济高效的高压互联技术——自屏蔽技术。自屏蔽技术仅利用高压器件本身的pn结结构，避免了上覆互连电位对高压器件击穿电压降低的影响。即使实现1000 V以上的超高压集成电路，也不需要额外的屏蔽结构。介绍了自屏蔽式1200v移电平器的设计思想和器件结构，并给出了其工作的实验结果。
A new, cost-effective, high-voltage inter-connection technique for HVICs, named Self-Shielding, is proposed. To avoid the lowering of breakdown voltage of high-voltage devices affected by the electric potential of overlying interconnections, self-shielding technique utilizes only the native PN-junction structures of high-voltage devices themselves. No additional shielding structure is required even to realize a very high-voltage IC above 1000 V. Design concept and device structures are presented together with the experimental results on the operation of self-shielded 1200 V level-shifters.