Impact of Native Oxide on the Capacitance-Voltage Characteristic of Pseudo-Mos Structure
Impact of Native Oxide on the Capacitance-Voltage Characteristic of Pseudo-Mos Structure
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自然氧化物对赝Mos结构电容电压特性的影响
DOI：
10.1149/07711.1887ecst
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发表时间：
2017
期刊：
影响因子：
--
通讯作者：
Y. Omura
中科院分区：
文献类型：
--
作者：
Isao Yarita;Shingo Sato;Y. Omura
分析了伪MOS结构顶部和/或背面(S)的自然氧化物生长对阻抗的影响。这种阻抗分析表明，通过HF清洗去除表面本征氧化物，实现了一定程度的电阻降低。HF处理后，抗性随处理时间延长而增加。这表明，当试图使用伪MOS结构来提取普遍的有效迁移率时，自然氧化物会导致对表面载流子密度的错误估计。
Influence of native oxide growth on the top and/or the back surface (s) of the pseudo-MOS structure on impedance is analyzed. This impedance analysis reveals a definite reduction in resistance is achieved with the removal the surface native oxide by HF cleaning. The resistance increased with the time spent after HF treatment. These suggest the native oxide will induce erroneous estimations of surface carrier density when attempting to use the pseudo-MOS structure to extract the universal effective mobility.