Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.
Nanodiamonds for device applications: An investigation of the properties of boron-doped detonation nanodiamonds.
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DOI：
10.1038/s41598-018-21670-w
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发表时间：
2018-02-19
影响因子：
4.6
通讯作者：
Jackman RB
中科院分区：
文献类型：
--
作者：
Afandi A;Howkins A;Boyd IW;Jackman RB
将硼包含在纳米金刚石中以产生半导体性质将在纳米金刚石电子领域中创造一类新的应用。理论研究在他们的结论上存在分歧，关于纳米级ND是否会支持稳定的替代硼状态，或者这种状态是否会不稳定，硼反而聚集或附着在边缘结构上。在本研究中，爆轰衍生的ND与有目的地添加硼在爆轰过程中进行了研究与广泛的实验技术。DND的尺寸为~4 nm，并且已经用CL、PL、拉曼和IR光谱、AFM和HR-TEM进行了研究，并且用阻抗谱进行了电测量;很明显，这里研究的B-DND确实支持取代的硼物种，因此将充当半导体金刚石纳米颗粒。一些粒子中存在中等掺杂水平（~1017 B cm−3）的证据，同时发现一些粒子重掺杂（~1020 B cm−3），可能具有准金属特性。因此，目前的研究表明，在纳米ND中进行替代性硼掺杂实际上是可能的，为这类有趣的纳米颗粒开辟了一系列新应用的道路。
The inclusion of boron within nanodiamonds to create semiconducting properties would create a new class of applications in the field of nanodiamond electronics. Theoretical studies have differed in their conclusions as to whether nm-scale NDs would support a stable substitutional boron state, or whether such a state would be unstable, with boron instead aggregating or attaching to edge structures. In the present study detonation-derived NDs with purposefully added boron during the detonation process have been studied with a wide range of experimental techniques. The DNDs are of ~4 nm in size, and have been studied with CL, PL, Raman and IR spectroscopies, AFM and HR-TEM and electrically measured with impedance spectroscopy; it is apparent that the B-DNDs studied here do indeed support substitutional boron species and hence will be acting as semiconducting diamond nanoparticles. Evidence for moderate doping levels in some particles (~1017 B cm−3), is found alongside the observation that some particles are heavily doped (~1020 B cm−3) and likely to be quasi-metallic in character. The current study has therefore shown that substitutional boron doping in nm NDs is in fact possible, opening-up the path to a whole host of new applications for this interesting class of nano-particles.
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影响因子：
4.1
作者：
Barnard, A. S.;Sternberg, M.
通讯作者：
Sternberg, M.
影响因子：
4
作者：
Chaudhary, Aysha;Welch, Joseph O.;Jackman, Richard B.
通讯作者：
Jackman, Richard B.
影响因子：
3.2
作者：
KAWARADA, H;YOKOTA, Y;HIRAKI, A
通讯作者：
HIRAKI, A
影响因子：
3.3
作者：
Barnard, A. S.;Sternberg, M.
通讯作者：
Sternberg, M.
影响因子：
4
作者：
Bevilacqua, Mose;Patel, Sameer;Jackman, Richard B.
通讯作者：
Jackman, Richard B.