Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
Assembling strained InAs islands on patterned GaAs substrates with chemical beam epitaxy
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DOI：
10.1063/1.115867
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发表时间：
1996-04-15
影响因子：
4
通讯作者：
Samuelson, L
中科院分区：
文献类型：
--
作者：
Jeppesen, S;Miller, MS;Samuelson, L
应变 InAs 岛的组装是通过化学束外延在图案化 GaAs 基板上生长来控制的。发现有条件可以选择性地将岛屿放置在图案特征中，但不能放置在周围无图案的区域上。在沟槽中形成最小周期为33nm的岛链，并且在孔阵列中生长单个或几个岛。当覆盖有砷化镓时，这些岛就像量子点一样并且具有光学活性。 (C) 1996 年美国物理研究所。
The assembly of strained InAs islands was manipulated through growth on patterned GaAs substrates with chemical beam epitaxy. Conditions were found to selectively place the islands in patterns features but not on surrounding unpatterned fields. Chains of islands having 33 nm minimum periods were formed in trenches, and single or few islands were grown in arrays of holes. When capped with GaAs, the islands behave as quantum dots and are optically active. (C) 1996 American Institute of Physics.