Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
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HfO2/SiO2/Si 结构中 SiO2 生长过程中 SiO2/Si 界面的 Si 发射
DOI：
10.1063/1.2195101
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发表时间：
2006
影响因子：
4
通讯作者：
K. Yamada
中科院分区：
文献类型：
--
作者：
Zhao Ming;K. Nakajima;Motofumi Suzuki;K. Kimura;M. Uematsu;K. Torii;S. Kamiyama;Y. Nara;K. Yamada
HfO2∕SiO2∕Si（001）结构在干氧条件下进行了退火处理，并用高分辨率卢瑟福后向散射光谱测量了其组成深度分布。观察到界面SiO2层的生长和Si的同时表面积累。结果表明，硅物质从SiO2 / Si界面释放，以释放氧化引起的应力，这与近年来理论研究的预测一致。
HfO2∕SiO2∕Si(001) structures were annealed in dry oxygen, and compositional depth profiles were measured by high-resolution Rutherford backscattering spectroscopy. Growth of the interfacial SiO2 layer and simultaneous surface accumulation of Si were observed. The observed result indicates that silicon species are emitted from the SiO2∕Si interface to release the stress induced by oxidation as was predicted by recent theoretical studies.