Polymerization of defect states at dislocation cores in InAs
Polymerization of defect states at dislocation cores in InAs
复制标题
InAs 位错核处缺陷态的聚合
DOI：
--
复制
发表时间：
2016
期刊：
影响因子：
--
通讯作者：
S. Wei
中科院分区：
文献类型：
--
作者：
Ji;Joongoo Kang;Jihui Yang;W. McMahon;S. Wei
位错本质上是点缺陷的线，其可以充当半导体器件中的复合中心。这些点缺陷不表现为孤立的缺陷。它们的空间接近性使它们能够杂交成一维带，并且所产生的缺陷带状态的分布由带的位置和其色散决定。在III-V族半导体中的滑动90°部分位错的情况下，位错核心可以采用各种不同的重构。这些重建中的每一个都具有不同的点缺陷排列，这影响到缺陷带的杂交及其相关的分散。在这里，我们说明了这些原则，通过执行第一原理计算InAs和InAs位错的一些缺陷能级位于带隙之外，它们不能作为复合中心。为了深入了解三元合金中位错的电子结构，本文列举了与InGaAs和GaAs有关的一些例子。
Dislocations are essentially lines of point defects which can act as recombination centers in semiconductor devices. These point defects do not behave as isolated defects. Their spatial proximity enables them to hybridize into a one-dimensional band, and the distribution of resulting defect-band states is determined by both the position of the band and its dispersion. In the case of glissile 90° partial dislocations in III-V semiconductors, the dislocation core can adopt a variety of different reconstructions. Each of these reconstructions has a different arrangement of point defects, which affects the hybridization into defect bands and their associated dispersion. Here, we illustrate these principles by performing first-principles calculations for InAs and find that some defect levels for InAs dislocations lie outside of the band gap where they cannot act as recombination centers. To provide some insight into the electronic structure of dislocations in ternary alloys, some examples relevant to InGaAs an...
影响因子：
8.6
作者：
Rhode, S. K.;Horton, M. K.;Moram, M. A.
通讯作者：
Moram, M. A.