Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition
Noninteger InAs monolayer well InAs/GaAs single quantum well structures grown by metalorganic chemical vapor deposition
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金属有机化学气相沉积非整数InAs单层阱InAs/GaAs单量子阱结构
DOI：
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发表时间：
1988
期刊：
影响因子：
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通讯作者：
N. Watanabe
中科院分区：
文献类型：
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作者：
K. Taira;H. Kawai;I. Hase;K. Kaneko;N. Watanabe
采用金属有机化学气相沉积法生长了InAs/GaAs单量子阱结构。培养的孔厚度分别为1.03、1.3和1.7 InAs单层。4 K光致发光光谱表现为强而窄的峰，其能量随井厚的增加而平稳下降。非整数值在模型上解释为界面在宏观上是平坦的，但存在横向范围小于激子的谷和丘。有效界面位置由它们的相对横向程度决定。
InAs/GaAs single quantum well structures have been grown by metalorganic chemical vapor deposition. The grown wells are 1.03, 1.3, and 1.7 InAs monolayers thick. The 4 K photoluminescence spectra exhibit strong and narrow peaks, their energy decreasing smoothly with increasing well thickness. The noninteger value is interpreted on the model that the interface is macroscopically flat but has valleys and hills with their lateral extent smaller than excitons. The effective interface position is determined by their relative lateral extent.