Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
Influence of Si growth temperature for embedding β-FeSi2 and resultant strain in β-FeSi2 on light emission from p-Si/β-FeSi2 particles/n-Si light-emitting diodes
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DOI：
10.1063/1.1405001
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发表时间：
2001-09
影响因子：
4
通讯作者：
T. Suemasu;Y. Negishi;K. Takakura;F. Hasegawa;T. Chikyow
中科院分区：
文献类型：
--
作者：
T. Suemasu;Y. Negishi;K. Takakura;F. Hasegawa;T. Chikyow
我们采用反应沉积外延β-FeSi_2和分子束外延（MBE）方法制备了Si/β-FeSi_2颗粒/Si结构。结果表明，β-FeSi_2的光致发光（PL）强度强烈地依赖于分子束外延硅的生长温度。在Si基发光二极管中，采用500 °C生长的Si嵌入β-FeSi 2有源区，实现了1.6 μm的室温电致发光。透射电子显微镜观察表明，从观察到PL的β-FeSi 2的a轴比没有PL的β-FeSi 2或体相β-FeSi 2的a轴长约9%。
We have fabricated Si/β-FeSi2 particles/Si structures by reactive deposition epitaxy for β-FeSi2 and molecular-beam epitaxy (MBE) for Si. It was found that the photoluminescence (PL) intensity of β-FeSi2 strongly depended on MBE-Si growth temperature for embedding β-FeSi2 in Si. Room temperature 1.6 μm electroluminescence was realized from a Si-based light-emitting diode by embedding the β-FeSi2 active region with Si grown at 500 °C. Observation with transmission electron microscopy revealed that the a axis of β-FeSi2 from which PL was observed was about 9% longer than that of β-FeSi2 without PL or of bulk β-FeSi2.