Micro Copper Pillar Interconnection Using Thermosonic Flip Chip Bonding
Micro Copper Pillar Interconnection Using Thermosonic Flip Chip Bonding
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DOI：
10.1115/1.4040794
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发表时间：
2018-07
影响因子：
1.6
通讯作者：
Boke Wu;Shuanghai Zhang;Fuliang Wang;Zhuo Chen
中科院分区：
文献类型：
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作者：
Boke Wu;Shuanghai Zhang;Fuliang Wang;Zhuo Chen
在高密度I/O条件下的三维集成电路（IC）互连中，微铜柱的结合被认为是主要的互连方法。为了实现低温键合，本研究探讨了热超声倒装键合的铜柱与锡帽。研究了键合力对键合强度的影响，在键合力为0.11N/40 μm柱凸点、衬底温度为200 °C的条件下，2s内平均键合强度达到2500 g（约84.8MPa）。此外，还研究了键合力对键合界面组织和金属间化合物（IMC）的影响。在低结合力下，在结合界面处也观察到锡晶须。
The incorporation of a micro copper pillar is considered as the major interconnection method in three-dimensional (3D) integrated circuit (IC) intergradation under high-density I/O conditions. To achieve low-temperature bonding, this study investigated the thermosonic flip chip bonding of a copper pillar with a tin cap. The effect of bonding force on bonding strength was studied, and an average bonding strength 2500 g (approximately 84.8 MPa) was obtained in 2 s, at an optimized bonding force of 0.11 N per 40 μm pillar bump, and substrate temperature of 200 °C. Additionally, the effect of the bonding force on bonding interface microstructure and intermetallic compounds (IMCs) was also investigated. Tin whiskers were also observed at the bonding interface at low bonding forces.