TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
TiO2 anatase nanolayer on TiN thin film exhibiting high-speed bipolar resistive switching
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DOI：
10.1063/1.2397006
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发表时间：
2006-11-27
影响因子：
4
通讯作者：
Awaya, Nobuyoshi
中科院分区：
文献类型：
--
作者：
Fujimoto, Masayuki;Koyama, Hiroshi;Awaya, Nobuyoshi
将TiN势垒金属薄膜表面氧化层生长在Pt电极上作为阻性开关材料。所制备的存储单元显示出纳秒级的双极电阻开关。采用高分辨率扫描透射电镜对TiN薄膜上约2.5 nm厚的TiO2锐钛矿层进行了表征。结果表明，高速电阻变化源于TiO2锐钛矿纳米层中的Mott转变，并且所获得的结果可能与先前报道的具有电阻开关的二元过渡金属氧化物薄膜中的丝路形成有关。(c) 2006年美国物理研究所。
The surface oxidized layer of a TiN barrier metal thin film grown on a Pt electrode was used as a resistive switching material. The fabricated memory cell shows bipolar resistive switching on a nanosecond order. A TiO2 anatase layer of about 2.5 nm thick on TiN thin film was characterized by high-resolution scanning transmission electron microscopy. The results suggested that the high-speed resistive change was derived from the Mott transition in the TiO2 anatase nanolayer, and the obtained results could relate to the formation of filament paths previously reported in binary transition metal oxide thin films exhibiting resistive switching. (c) 2006 American Institute of Physics.