A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
A high speed PE-ALD ZnO Schottky diode rectifier with low interface-state density
复制标题
DOI：
10.1088/1361-6463/aaa4a2
复制
发表时间：
2018-01
期刊：
影响因子：
--
通讯作者：
Jidong Jin;Jiawei Zhang;A. Shaw;V. Kudina;I. Mitrovic;J. S. Wrench;P. Chalker;C. Balocco;A. Song;S. Hall
中科院分区：
文献类型：
--
作者：
Jidong Jin;Jiawei Zhang;A. Shaw;V. Kudina;I. Mitrovic;J. S. Wrench;P. Chalker;C. Balocco;A. Song;S. Hall
近年来，氧化锌因其在高速电子领域的潜在应用而备受关注。本工作基于等离子体增强原子层沉积的氧化锌薄膜和反应射频溅射制备的PtOx肖特基接触，研制了一种高速肖特基二极管整流器。该整流器的理想系数为1.31，有效势垒高度为0.79 eV，整流比为1.17×107，截止频率高达550 MHz。低频噪声测量表明，该整流器具有5.13×1012 cm−2 eV−1的低界面态密度，其噪声主要由电子在PtOx/氧化锌界面上的随机游走机制所控制。工作表明，该整流器既可用于噪声敏感的电子设备，也可用于高频电子设备。
Zinc oxide (ZnO) has recently attracted attention for its potential application to high speed electronics. In this work, a high speed Schottky diode rectifier was fabricated based on a ZnO thin film deposited by plasma-enhanced atomic layer deposition and a PtOx Schottky contact deposited by reactive radio-frequency sputtering. The rectifier shows an ideality factor of 1.31, an effective barrier height of 0.79 eV, a rectification ratio of 1.17 × 107, and cut-off frequency as high as 550 MHz. Low frequency noise measurements reveal that the rectifier has a low interface-state density of 5.13 × 1012 cm−2 eV−1, and the noise is dominated by the mechanism of a random walk of electrons at the PtOx/ZnO interface. The work shows that the rectifier can be used for both noise sensitive and high frequency electronics applications.