High-Temperature Hardness of Bulk Single-Crystal AlN
High-Temperature Hardness of Bulk Single-Crystal AlN
复制标题
大块单晶 AlN 的高温硬度
DOI：
10.1143/jjap.40.l426
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
V. Dmitriev
中科院分区：
文献类型：
--
作者：
I. Yonenaga;A. Nikolaev;Y. Melnik;V. Dmitriev
单晶氮化铝（AlN）0.5毫米厚的晶片的硬度在高温下进行了测量，并与其他半导体进行了比较。使用维氏压痕法在20-1400°C的温度范围内测定在0.5-5 N的施加载荷下的硬度。在室温下测得的平均硬度为17.7 GPa。AlN的硬度高于GaN在整个温度范围内调查。AlN在高温下具有很高的机械稳定性。
The hardness of single-crystal aluminum nitride (AlN) 0.5-mm-thick wafers was measured at elevated temperatures and compared with that of other semiconductors. A Vickers indentation method was used to determine the hardness under an applied load of 0.5–5 N in the temperature range 20–1400°C. The average hardness was measured as 17.7 GPa at room temperature. AlN exhibits a hardness higher than that of GaN in the entire temperature range investigated. A high mechanical stability for AlN at high temperatures is deduced.