10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
10 kV SiC Power MOSFETs and JBS Diodes: Enabling Revolutionary Module and Power Conversion Technologies
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10 kV SiC 功率 MOSFET 和 JBS 二极管：实现革命性模块和功率转换技术
DOI：
10.4028/www.scientific.net/msf.717-720.1225
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
A. Hefner
中科院分区：
文献类型：
--
作者：
M. Das;D. Grider;S. Leslie;R. Raju;M. Schutten;A. Hefner
随着SiC MOSFET和肖特基二极管的出现，功率半导体器件的多数载流子域已扩展到10 kV。24个MOSFET和12个JBS二极管组装在一个10 kV半H桥功率模块中，以将每个开关的电流处理能力提高到120 A，而不影响管芯级特性。首次成功展示了定制设计的系统（13.8 kV至465/103 V固态变电站），这些最先进的SiC模块可实现高达855 kVA的运行和97%的效率。与60 Hz的传统模拟Transformer相比，SiC SSPS在20 kHz下实现软开关，重量减轻了70%，尺寸减小了50%。
The majority carrier domain of power semiconductor devices has been extended to 10 kV with the advent of SiC MOSFETs and Schottky diodes. Twenty-four MOSFETs and twelve JBS diodes have been assembled in a 10 kV half H-bridge power module to increase the current handling capability to 120 A per switch without compromising the die-level characteristics. For the first time, a custom designed system (13.8 kV to 465/√3 V solid state power substation) has been successfully demonstrated with these state of the art SiC modules up to 855 kVA operation and 97% efficiency. Soft-switching at 20 kHz, the SiC enabled SSPS represents a 70% reduction in weight and 50% reduction in size when compared to a 60 Hz conventional, analog transformer.