Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
Characterization of field-effect transistors with La2Hf2O7 and HfO2 gate dielectric layers deposited by molecular-beam epitaxy
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DOI：
10.1063/1.2163985
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发表时间：
2006-01
影响因子：
3.2
通讯作者：
Z. Rittersma;J. Hooker;G. Vellianitis;J. Locquet;C. Marchiori;M. Sousa;J. Fompeyrine;L. Pantisano;W. Deweerd;T. Schram;M. Rosmeulen;S. Gendt;A. Dimoulas
中科院分区：
文献类型：
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作者：
Z. Rittersma;J. Hooker;G. Vellianitis;J. Locquet;C. Marchiori;M. Sousa;J. Fompeyrine;L. Pantisano;W. Deweerd;T. Schram;M. Rosmeulen;S. Gendt;A. Dimoulas
报道了用分子束外延方法制备的La2Hf2O7(LHO)和HfO2(Ho)高介电层的电学性质。采用物理气相沉积法制备了具有LHO、HO栅介质层和TaN金属栅电极的电容器和晶体管。测定了大面积金属氧化物半导体电容器和金属氧化物半导体场效应晶体管的(SiO_2)当量氧化层厚度(EOT)、反型氧化层中的电氧化层厚度和栅漏电流密度(JG)。物理厚度为Tph=30A的HO层在Vg=VfB−−1V时的电导率为15.1A(Toxinv)，J_g=8.1×10_−~6A/cm~2。在SiON上沉积的LHO层在Vg=VfB−−1V时的最小电流为18.7A(Toxinv)，Jg=4×10-−8A/cm~2。当E=1 mV/cm时，在40A厚的硅衬底上沉积了μ为147 cm~2/vs的LHO层，在高E场下观察到了电子的有效迁移率。对于30-A厚的Ho层，在相同的磁场下，μ的Ef=170 cm~2/vs。Lho Layers Depos...
The electrical properties of La2Hf2O7 (LHO) and HfO2 (HO) high-k dielectric layers deposited by molecular-beam epitaxy are reported. Capacitors and transistors with LHO and HO gate dielectric layers and TaN metal gate electrodes deposited using physical vapor deposition were fabricated. The (SiO2) equivalent oxide thickness (EOT), the electrical oxide thickness in inversion toxinv, and the gate leakage current density (Jg) were determined on large area metal-oxide-semiconductor capacitors and metal-oxide-semiconductor field-effect transistors. HO layers with a physical thickness tph=30A showed an EOT (toxinv) of 15.1A (19.3A) with Jg=8.1×10−6A∕cm2 at Vg=Vfb−1V. LHO layers deposited on SiON showed a minimum EOT (toxinv) of 18.7A (25A) with Jg=4×10−8A∕cm2 at Vg=Vfb−1V. The (effective) electron mobility at high E field for LHO layers was observed for a 40-A-thick LHO layer deposited on Si with μeff=147cm2∕Vs at E=1MV∕cm. For a 30-A-thick HO layer at identical field, μeff=170cm2∕Vs was found. LHO layers depos...