Impurity induced disordering of CdZnSe/ZnSe strained layer superlattices by germanium diffusion
Impurity induced disordering of CdZnSe/ZnSe strained layer superlattices by germanium diffusion
复制标题
DOI：
10.1063/1.109003
复制
发表时间：
1993-06
影响因子：
4
通讯作者：
T. Yokogawa;P. Floyd;M. Hashemi;J. Merz;H. Luo;J. Furdyna
中科院分区：
文献类型：
--
作者：
T. Yokogawa;P. Floyd;M. Hashemi;J. Merz;H. Luo;J. Furdyna
我们报告的第一个确认无序的CdZnSe/ZnSe应变层超晶格（SLS）的Ge扩散。由于SLS周期性结构，生长态样品和在没有Ge层的情况下退火的样品都显示出几个数量级的良好分辨的双晶X射线卫星峰。然而，卫星峰在Ge扩散的样品中完全消失，表明SLS结构是由Ge扩散而不是由退火过程引起的。在1.4 K下，生长态和退火态样品在没有Ge扩散的情况下的PL测量显示出相同的、在483 nm附近的尖锐激子发射。在Ge扩散之后，PL峰向更高的能量移动，确认SLS的层无序。
We report the first confirmation of disordering of CdZnSe/ZnSe strained layer superlattices (SLSs) by Ge diffusion. Both the as‐grown sample and the sample annealed without a Ge layer showed several orders of well‐resolved double crystal x‐ray satellite peaks due to SLS periodic structure. However, the satellite peaks completely disappeared in the Ge‐diffused sample, indicating that the SLS structure was disordered by the Ge diffusion and not caused by the annealing process. PL measurements at 1.4 K of both the as‐grown and the annealed samples without Ge diffusion show identical, sharp excitonic emission around 483 nm. After Ge diffusion, the PL peaks shift to higher energy confirming the layer disordering of the SLS.