Filled tetrahedral semiconductorLi3AlN2studied with optical absorption: Application of the interstitial insertion rule
Filled tetrahedral semiconductorLi3AlN2studied with optical absorption: Application of the interstitial insertion rule
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DOI：
10.1103/physrevb.70.233303
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发表时间：
2004-12
影响因子：
3.7
通讯作者：
K. Kushida;Y. Kaneko;K. Kuriyama
中科院分区：
文献类型：
--
作者：
K. Kushida;Y. Kaneko;K. Kuriyama
