Patterning challenges for monolithic silicon photonics: AP/DFM: Advanced patterning / design for manufacturability
Patterning challenges for monolithic silicon photonics: AP/DFM: Advanced patterning / design for manufacturability
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单片硅光子学的图案化挑战：AP/DFM：先进的图案化/可制造性设计
DOI：
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发表时间：
2018
期刊：
影响因子：
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通讯作者：
T. Wiltshire
中科院分区：
文献类型：
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作者：
Colleen Meagher;Z. Sowinski;Chienfan Yu;Shuren Hu;K. Nummy;M. Ghosal;Ramya Viswanathan;A. Abdo;T. Wiltshire
光子器件的曲线几何形状与现有CMOS器件的直线设计有着根本的不同。在CMOS和光子元件的单片集成中，需要对传统流进行工艺改变以适应光子器件的独特几何形状。在本文中，我们讨论了在晶圆加工和光学接近校正方面所做的改变，以提高单片90nm技术的光学性能。
The curvilinear geometries of photonic devices are fundamentally different than the rectilinear designs of existing CMOS devices. In a monolithic integration of CMOS and photonic components, process changes to the conventional flow are required to accommodate the unique geometries of photonic devices. In this paper we discuss changes made in both fab processing and Optical Proximity Correction to improve the optical performance on a monolithic 90nm technology.