Chemical Vapor Growth of Silicon Phosphide Nanostructures
Chemical Vapor Growth of Silicon Phosphide Nanostructures
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DOI：
10.1557/adv.2019.437
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发表时间：
2020-06
期刊：
影响因子：
0.8
通讯作者：
Zhuoqun Wen;Yiping Wang;Zhizhong Chen;Jian Shi
中科院分区：
文献类型：
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作者：
Zhuoqun Wen;Yiping Wang;Zhizhong Chen;Jian Shi
在寻找具有高面内迁移率、适当带隙和与基于气相的制造兼容的化学稳定的二维（2D）材料的过程中，货车德瓦尔斯半导体SiP已经成为作为黑磷的稳健变体的潜在候选物。虽然在20世纪70年代合成了大块SiP晶体，但仍然没有SiP纳米结构或薄膜的气相合成。本文首次报道了在SiO_2/Si衬底上化学气相生长SiP纳米结构。在SiO_2/Si衬底上或含SiP的同心环上生长了横向尺寸达20 μm的SiP岛，并显示出清晰的拉曼信号。通过XRD证实了SiP相的存在。环和岛的形成是由多个咖啡环生长模型，其中液滴生长前沿的动态波动引起的同心环表面的形貌。这种新的生长方法可能有助于IV-III族高迁移率2D半导体的可控生长。
In the search for chemically stable two-dimensional (2D) materials with high in-plane mobility, proper bandgap, and compatibility with vapor-based fabrication, van der Waals semiconductor SiP has become a potential candidate as a robust variation of black phosphorous. While bulk SiP crystals were synthesized in the 1970s, the vapor-based synthesis of SiP nanostructures or thin films is still absent. We here report the first chemical vapor growth of SiP nanostructures on SiO_2/Si substrate. SiP islands with lateral size up to 20 µm and showing well-defined Raman signals were grown on SiO_2/Si substrate or on SiP-containing concentric rings. The presence of SiP phase is confirmed by XRD. The formation of rings and islands is explained by a multiple coffee ring growth model where a dynamic fluctuation of droplet growth front induces the topography of concentric ring surfaces. This new growth method might shed light on the controlled growth of group IV-III high-mobility 2D semiconductors.