Band structure of a HgTe-based three-dimensional topological insulator
Band structure of a HgTe-based three-dimensional topological insulator
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DOI：
10.1103/physrevb.102.115113
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发表时间：
2020-09-08
影响因子：
3.7
通讯作者：
Pimenov, A.
中科院分区：
文献类型：
--
作者：
Gospodaric, J.;Dziom, V;Pimenov, A.
通过对回旋共振的分析，我们在实验上得到了基于碲化汞薄膜的三维拓扑绝缘体的能带结构。顶部门控被用来移动的费米能级在薄膜中，使我们能够检测到单独的共振模式对应的表面状态在两个相对的薄膜界面，体导带，和价带。实验的能带结构与K . p模型。由于表面能带和体能带的强烈杂化，表面态的色散在电子能量的宽范围内接近抛物线。
From the analysis of the cyclotron resonance, we experimentally obtain the band structure of the three-dimensional topological insulator based on a HgTe thin film. Top gating was used to shift the Fermi level in the film, allowing us to detect separate resonance modes corresponding to the surface states at two opposite film interfaces, the bulk conduction band, and the valence band. The experimental band structure agrees reasonably well with the predictions of the k . p model. Due to the strong hybridization of the surface and bulk bands, the dispersion of the surface states is close to parabolic in the broad range of the electron energies.