Controlled structure of gallium oxide nanowires
Controlled structure of gallium oxide nanowires
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DOI：
10.1021/jp034728o
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发表时间：
2003-08-28
影响因子：
3.3
通讯作者：
Yang, H
中科院分区：
文献类型：
--
作者：
Chun, HJ;Choi, YS;Yang, H
通过镓/氧化镓混合物和氧气的化学气相沉积来合成氧化镓纳米线。纳米线的直径为30-80 nm，平均值为50 nm。它们由单晶单斜晶体组成。虽然没有催化剂生长的纳米线表现出显着的平面缺陷，与镍催化纳米石生长的纳米线几乎是无缺陷的。在没有催化剂的情况下生长的纳米线的生长方向是均匀的[010]。相反，用催化剂生长的纳米线具有随机生长方向。X-射线衍射、拉曼光谱和光致发光与纳米线的结构特征有很好的相关性。这一结果为催化剂对纳米线结构的控制提供了依据。
Gallium oxide nanowires were synthesized via chemical vapor deposition of gallium/gallium oxide mixture and oxygen. The diameter of the nanowires is 30-80 nm with an average value of 50 nm. They consist of single-crystalline monoclinic crystal. While the nanowires grown without catalyst exhibit a significant planar defect, the nanowires grown with nickel catalytic nanopaticles are almost defect-free. The growth direction of the nanowires grown without the catalyst is uniformly [010]. In contrast, the nanowires grown with the catalyst have random growth direction. X-ray diffraction, Raman spectroscopy, and photoluminescence are well correlated with the structural characteristics of the nanowires. The result provides an evidence for the catalyst effect in controlling the structure of nanowires.