Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition
Quaternary InAlGaN-based multi-quantum wells for ultraviolet light emitting diodes grown by metalorganic chemical vapor deposition
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DOI：
10.1016/s0022-0248(03)00951-5
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发表时间：
2003-05
影响因子：
1.8
通讯作者：
S. Guo;M. Pophristic;B. Peres;I. Ferguson
中科院分区：
文献类型：
--
作者：
S. Guo;M. Pophristic;B. Peres;I. Ferguson
