Integration of Behavioral Models in the Full-Field TLM Method
Integration of Behavioral Models in the Full-Field TLM Method
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DOI：
10.1109/temc.2012.2183133
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发表时间：
2012-04-01
影响因子：
2.1
通讯作者：
Sewell, Phillip
中科院分区：
文献类型：
--
作者：
Scott, Ian;Kumar, Varindra;Sewell, Phillip
数字电路的精确仿真需要包括场现象。由于现代数字系统的特征尺寸越来越小，时钟频率越来越高，信号完整性、串扰和外部EMI等问题在设计阶段至关重要。本文通过将数字集成电路的行为描述嵌入到全波场模型中，讨论了在数字系统仿真中引入场现象的问题。本文成功地模拟了数字电路，将外部电磁干扰（EMI）的操作环境，需要进一步的研究，将内部EMI的影响，在IC硅。传输线建模方法用于场模型，而输入/输出缓冲器信息规范对数字IC行为进行建模。
The accurate simulation of digital circuits requires the inclusion of field phenomena. Issues such as signal integrity, crosstalk, and external EMI are of paramount importance in the design stage, due to the decreasing feature size and increasing clock frequency of modern digital systems. This paper addresses issues with the incorporation of field phenomena in the simulation of digital systems, by embedding behavioral descriptions of digital ICs into a full wave field model. The paper successfully simulates digital circuits incorporating the external electromagnetic interference (EMI) environment of operation; further research is required to incorporate the internal EMI effects in the IC silicon. The transmission-line modeling method is used for the field model, while the input/output buffer information specification models the digital IC behavior.