Semiconductor Devices: Physics and Technology
Semiconductor Devices: Physics and Technology
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发表时间：
1985-04
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通讯作者：
S. Sze
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作者：
S. Sze
序言。导论.第一部分：半导体物理。热平衡时的能带和载流子浓度。载流子输运现象第二部分：半导体器件。pn结双极晶体管及相关器件。MOSFET及相关器件MESFET及相关器件微波二极管、量子效应和热电子器件。光子器件。第三部分：半导体技术。晶体生长和外延。成膜。光刻和蚀刻。杂质掺杂。集成器件。附录A：符号列表。附录B：国际单位制（SI单位）。附录C：单位前缀。附录D：希腊字母表。附录E：物理常数。附录F：重要元素和二元化合物半导体在300 K时的性质。附录G：Si和GaAs在300 K时的特性。附录H：半导体态密度的推导。附录I：间接蒸发率的推导。附录J：对称谐振调谐二极管透射系数的计算。附录K：气体的基本动力学理论。附录L：选定问题的答案。指数.
Preface. Introduction. PART I: SEMICONDUCTOR PHYSICS. Energy Bands and Carrier Concentration in Thermal Equilibrium. Carrier Transport Phenomena. PART II: SEMICONDUCTOR DEVICES. p-n Junction. Bipolar Transistor and Related Devices. MOSFET and Related Devices. MESFET and Related Devices. Microwave Diodes, Quantum-Effect, and Hot-Electron Devices. Photonic Devices. PART III: SEMICONDUCTOR TECHNOLOGY. Crystal Growth and Epitaxy. Film Formation. Lithography and Etching. Impurity Doping. Integrated Devices. Appendix A: List of Symbols. Appendix B: International Systems of Units (SI Units). Appendix C: Unit Prefixes. Appendix D: Greek Alphabet. Appendix E: Physical Constants. Appendix F: Properties of Important Element and Binary Compound Semiconductors at 300 K. Appendix G: Properties of Si and GaAs at 300 K. Appendix H: Derivation of the Density of States in Semiconductor. Appendix I: Derivation of Recombination Rate for Indirect Recombination. Appendix J: Calculation of the Transmission Coefficient for a Symmetric Resonant-Tunneling Diode. Appendix K: Basic Kinetic Theory of Gases. Appendix L: Answers to Selected Problems. Index.