An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs
An Updated Perspective of Single Event Gate Rupture and Single Event Burnout in Power MOSFETs
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DOI：
10.1109/tns.2013.2252194
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发表时间：
2013-06-01
影响因子：
1.8
通讯作者：
Titus, Jeffrey L.
中科院分区：
文献类型：
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作者：
Titus, Jeffrey L.
过去25年的研究表明，重离子可以触发功率MOSFET的灾难性故障模式[e.例如，在一个实施例中，单粒子栅极破裂（SEGR）和单粒子烧毁（SEB）]。1996年，在IEEE TRANSACTION ON NUCLEAR SCIENCE的特刊上发表了两篇论文[约翰逊、帕劳、达克斯、加洛韦和施林普夫，“用于功率MOSFET中建模单粒子效应的技术综述”，IEEE Trans.Nucl.Sci.，第43卷，第2号，第546-560，April. 1996]，[Titus和惠特利，“垂直功率MOSFET中单粒子栅极破裂和烧毁的实验研究”，IEEE核科学学报，第43卷，第2期，第100页。533-545，Apr. 1996]。这两篇论文继续提供有关垂直平面MOSFET中SEB和SEGR的优秀信息和参考。本文提供了最新的参考/信息，并提供了垂直平面MOSFET中SEB和SEGR的最新观点，以及其他表现出SEB和SEGR效应的器件类型的参考/信息。
Studies over the past 25 years have shown that heavy ions can trigger catastrophic failure modes in power MOSFETs [e. g., single-event gate rupture (SEGR) and single-event burnout (SEB)]. In 1996, two papers were published in a special issue of the IEEE TRANSACTION ON NUCLEAR SCIENCE [Johnson, Palau, Dachs, Galloway and Schrimpf, "A Review of the Techniques Used for Modeling Single-Event Effects in Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 546-560, April. 1996], [Titus and Wheatley, "Experimental Studies of Single-Event Gate Rupture and Burnout in Vertical Power MOSFETs," IEEE Trans. Nucl. Sci., vol. 43, no. 2, pp. 533-545, Apr. 1996]. Those two papers continue to provide excellent information and references with regard to SEB and SEGR in vertical planar MOSFETs. This paper provides updated references/information and provides an updated perspective of SEB and SEGR in vertical planar MOSFETs as well as provides references/information to other device types that exhibit SEB and SEGR effects.