Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices
Focused ion beam preparation for cross-sectional transmission electron microscopy investigation of the top surface of unpassivated or partially processed ULSI devices
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聚焦离子束制备，用于对未钝化或部分加工的 ULSI 器件的顶面进行截面透射电子显微镜研究
DOI：
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发表时间：
1998
期刊：
影响因子：
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通讯作者：
P. Roussel
中科院分区：
文献类型：
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作者：
H. Bender;P. V. Marcke;C. Drijbooms;P. Roussel
聚焦离子束制备的透射电子显微镜标本的部分处理或未钝化的ULSI器件的替代技术进行了讨论和说明的案例研究的例子。材料的损失，由于铣削与Ga离子束和注入损伤的顶层估计和实验观察相比。研究了在聚焦离子束（Pt）、非原位（Au、胶沉积物）或在标准器件加工条件下（非晶或多晶Si）原位沉积的不同种类的保护层。
Alternative techniques for focused ion beam preparation of transmission electron microscopy specimens of partially processed or unpassivated ULSI devices are discussed and illustrated with case study examples. The loss of material due to milling with the Ga ion beam and the implantation damage in the top layers is estimated and compared with experimental observations. Different kinds of protective layers deposited in-situ in the focused ion beam (Pt), ex-situ (Au, glue remainders) or under standard device processing conditions (amorphous or polycrystalline Si) are examined.