Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy
Ferromagnet/Two-Dimensional Semiconducting Transition-Metal Dichalcogenide Interface with Perpendicular Magnetic Anisotropy
复制标题
具有垂直磁各向异性的铁磁体/二维半导体过渡金属二硫族化物界面
作者：
Zhang Wen;Wong Ping Kwan Johnny;Zhou Xiaochao;Rath Ashutosh;Huang Zhaocong;Wang Hongyu;Morton Simon A;Yuan Jiaren;Zhang Lei;Chua Rebekah;Zeng Shengwei;Liu Er;Xu Feng;Ari;o;Chua Daniel H C;Feng Yuan Ping;van der Laan Gerrit;Pennycook Stephen J;Zhai Ya;We
铁磁体/二维过渡金属二硫属化物（FM/2D TMD）界面提供了将磁信息存储推向原子薄极限的诱人机会。现有的工作集中在与机械剥离或化学气相沉积生长的TMD接触的FM上，其中不能保证清洁的界面。在这里，我们报告了一个可靠的方法来实现铁磁CoFeB和分子束外延MoSe 2之间的无污染界面。我们显示了从界面产生的自旋重取向，导致垂直磁各向异性（PMA），并揭示了CoFeB/2D MoSe 2界面允许PMA开发在更广泛的CoFeB厚度范围比常见的系统，如CoFeB/MgO。使用X射线磁性圆二色性分析，我们属性生成的PMA界面的d-d杂化，并推导出一个一般规则，以提高其幅度。我们还证明了良好的磁性柔软性和相当大的磁矩保留在界面处，并从理论上预测了自旋过滤的界面带匹配。我们的工作突出了CoFeB/2D MoSe 2接口作为一个有前途的平台，用于检查基于TMD的自旋电子应用，并可能刺激进一步发展与其他组合FM/2D TMD接口。
Ferromagnet/two-dimensional transition-metal dichalcogenide (FM/2D TMD) interfaces provide attractive opportunities to push magnetic information storage to the atomically thin limit. Existing work has focused on FMs contacted with mechanically exfoliated or chemically vapor-deposition-grown TMDs, where clean interfaces cannot be guaranteed. Here, we report a reliable way to achieve contamination-free interfaces between ferromagnetic CoFeB and molecular-beam epitaxial MoSe2. We show a spin reorientation arising from the interface, leading to a perpendicular magnetic anisotropy (PMA), and reveal the CoFeB/2D MoSe2interface allowing for the PMA development in a broader CoFeB thickness-range than common systems such as CoFeB/MgO. Using X-ray magnetic circular dichroism analysis, we attribute generation of this PMA to interfacial d–d hybridization and deduce a general rule to enhance its magnitude. We also demonstrate favorable magnetic softness and considerable magnetic moment preserved at the interface and theoretically predict the interfacial band matching for spin filtering. Our work highlights the CoFeB/2D MoSe2interface as a promising platform for examination of TMD-based spintronic applications and might stimulate further development with other combinations of FM/2D TMD interfaces.