Impedance spectroscopy of micron sized magnetic tunnel junctions with MgO tunnel barrier
Impedance spectroscopy of micron sized magnetic tunnel junctions with MgO tunnel barrier
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DOI：
10.1063/1.3449573
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发表时间：
2010-06-07
影响因子：
4
通讯作者：
Xiao, Gang
中科院分区：
文献类型：
--
作者：
Ingvarsson, Snorri;Arikan, Mustafa;Xiao, Gang
我们研究了微米尺寸的磁性隧道结传感器与1.7纳米氧化镁隧道势垒的磁阻抗。我们在100 Hz-40 MHz之间的频率范围内进行交流阻抗谱作为在感测方向上施加的磁场的函数。我们用一个简单的RLC电路来模拟我们的器件。拟合模型，我们的数据结果在频率无关的R，L和C，我们的低频结果与直流测量一致。尽管与已发表的MgO势垒磁性隧道结的界面电容结果非常一致，但我们没有观察到任何磁电容。(C)2010年美国物理学会。[doi：10.1063/1.3449573]
We have studied the magnetoimpedance of micron sized magnetic tunnel junction sensors with 1.7 nm MgO tunnel barrier. We performed ac impedance spectroscopy in the frequency range between 100 Hz-40 MHz as a function of applied magnetic field in the sensing direction. We model our devices with a simple RLC circuit. Fitting the model to our data results in frequency independent R, L, and C, and our low frequency results are in agreement with dc measurements. Despite excellent agreement with published result on interface capacitance for MgO barrier magnetic tunnel junctions similar to ours we do not observe any magnetocapacitance in our devices. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3449573]