Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems
Stress-based control of magnetic nanowire domain walls in artificial multiferroic systems
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DOI：
10.1063/1.3532041
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发表时间：
2011-01-15
影响因子：
3.2
通讯作者：
Allwood, D. A.
中科院分区：
文献类型：
--
作者：
Dean, J.;Bryan, M. T.;Allwood, D. A.
将压电材料和压磁材料结合在一起的人工多铁系统提供了控制材料性能的新方法。在这里，我们使用结构和磁性相结合的有限元模型来展示压电薄膜中的局域应变如何与压磁纳米线相耦合来吸引和钉扎磁畴壁。可寻址触点的同步切换使得能够在没有施加磁场或自旋极化电流的情况下控制纳米线中的钉扎点的移动，从而实现域壁的可控移动，而与域壁结构无关。相反，压磁材料中的域壁感应应变在压电体中诱导局部电势差，提供了一种传感域壁的机制。这种方法克服了磁性纳米线存储器中磁壁结构依赖行为和高功耗的问题。基于这些效应的非易失性随机存取或移位寄存器存储器可以实现存储密度<1 Gbit/in(2)、小于10 ns的开关时间和功耗
Artificial multiferroic systems, which combine piezoelectric and piezomagnetic materials, offer novel methods of controlling material properties. Here, we use combined structural and magnetic finite element models to show how localized strains in a piezoelectric film coupled to a piezomagnetic nanowire can attract and pin magnetic domain walls. Synchronous switching of addressable contacts enables the controlled movement of pinning sites, and hence domain walls, in the nanowire without applied magnetic field or spin-polarized current, irrespective of domain wall structure. Conversely, domain wall-induced strain in the piezomagnetic material induces a local potential difference in the piezoelectric, providing a mechanism for sensing domain walls. This approach overcomes the problems in magnetic nanowire memories of domain wall structure-dependent behavior and high power consumption. Nonvolatile random access or shift register memories based on these effects can achieve storage densities >1 Gbit/In(2), sub-10 ns switching times, and power consumption