The piezoelectric coefficient of gallium nitride thin films
The piezoelectric coefficient of gallium nitride thin films
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DOI：
10.1063/1.121219
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发表时间：
1998-06
影响因子：
4
通讯作者：
S. Muensit;I. Guy
中科院分区：
文献类型：
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作者：
S. Muensit;I. Guy
利用激光干涉仪测量了纤锌矿GaN的d33压电系数。GaN薄膜采用化学气相沉积法生长，厚度为1 μm，压电系数测量的空间分辨率为100 μm。样品安装被认为在所观察到的响应中起着重要的作用。对于刚性安装的样品，测得的d33为2.0±0.1 pm V−1。
A laser interferometer was used to measure the d33 piezoelectric coefficient of wurtzite GaN. The GaN was in the form of 1 μm thick films, grown by chemical vapor deposition and the measurement of the piezoelectric coefficient was made with a spatial resolution of 100 μm. Sample mounting was found to play an important part in the observed response. For rigidly mounted samples, the measured d33 was 2.0±0.1 pm V−1.