Design of a novel strained-SI HBT with virtual substrate for high current gain-breakdown voltage product
Design of a novel strained-SI HBT with virtual substrate for high current gain-breakdown voltage product
复制标题
DOI：
10.1109/icct.2015.7399858
复制
发表时间：
2015-10
期刊：
影响因子：
--
通讯作者：
D. Jin;Zhiyong Wang;Yanling Guo;Wanrong Zhang;Xinyi Zhao;Qing Wang
中科院分区：
文献类型：
--
作者：
D. Jin;Zhiyong Wang;Yanling Guo;Wanrong Zhang;Xinyi Zhao;Qing Wang
为了减弱垂直衬底应变硅HBT的晶格自热效应，提出了梯形Ge掺杂分布，并利用SILVACO TCAD建立了器件模型。结果表明，器件的温度系数降低，有利于高功率应用，但代价是电流增益降低。因此，提出了进一步设计超结集电极结构，以提高与电流增益无关的击穿电压。结果，新型垂直衬底应变硅HBT的电流增益击穿电压乘积是传统器件的1.61倍，开拓了硅锗HBT的高功率应用。
In order to weaken the lattice self-heating effect of strained-Si HBT with vertical substrate, a trapezoid Ge doping profile in base is proposed and the device model is established with SILVACO TCAD. It is shown that temperature coefficient of the device is decreased, which is benefit for high power application, at the expense of the decrease of the current gain. Therefore, a further design of superjunction collector structure is presented to enhance the breakdown voltage which is irrelevant to the current gain. As a result, the product of current gain-breakdown voltage in the novel strained-Si HBT with vertical substrate is 1.61 times higher that the conventional device, which develops the high power application of SiGe HBTs.