Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection
Characterization of Uncooled Poly SiGe Microbolometer for Infrared Detection
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用于红外检测的非制冷多晶硅锗微测辐射热计的表征
DOI：
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发表时间：
2003
期刊：
影响因子：
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通讯作者：
Liu Litian
中科院分区：
文献类型：
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作者：
D. Liang;Yue Ruifeng;Liu Litian
用于红外检测的非冷却多晶硅Ge微测辐射热计已经制造出来并进行了表征。采用超高真空化学气相沉积（UHVCVD）系统沉积多晶硅锗薄膜，并通过卢瑟福背散射光谱（RBS）和拉曼表征其结构性能。研究了电阻温度系数对工作温度和退火温度的依赖性。利用硅微加工技术，采用腿支撑的微桥来降低微测辐射热计的热导率。结果表明，在斩波频率为15 Hz、偏置电压为5 V时，最大探测灵敏度为8.3×108 cm Hz1/2/W，热响应时间为16.6 ms。
An uncooled poly SiGe microbolometer for infrared detection has been fabricated and characterized. The poly SiGe thin film is deposited by ultrahigh vacuum chemical vapour deposition (UHVCVD) system and its structural properties are characterized by Rutherford backscattering spectrometry (RBS) and Raman. The dependences of the temperature coefficient of resistance on operation temperature and on annealing temperature have been investigated. A leg-supported microbridge is used to decrease the thermal conductance of microbolometer with the silicon micromachining technique. The results show that at a chopping frequency of 15 Hz and a bias voltage of 5 V, the maximum detectivity of 8.3×108 cm Hz1/2/W is achieved with a thermal response time of 16.6 ms.