Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources
Heterogeneous integration of visible AlGaInP and infrared AlInGaAs lasers with GaN-based light sources
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可见光 AlGaInP 和红外 AlInGaAs 激光器与 GaN 基光源的异质集成
DOI：
10.1049/el:19991456
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发表时间：
1999
期刊：
影响因子：
--
通讯作者：
D. Bour
中科院分区：
文献类型：
--
作者：
P. Floyd;D. W. Treat;D. Bour
展示了使用 GaAs 基激光结构与 GaN 基发光二极管 (LED) 异质结构的晶圆熔合制造的集成红光、红外光和蓝光发射器阵列。与功能性 GaN LED 融合的红色和红外激光器已成功运行。显示了红外 AlGaInAs QW 激光器 (4 × 500 µm)，其阈值电流 (Ith) 为 40 mA，外部微分量子效率 (ηd) 在 ~821 nm 处为 11.5%/facet。还显示了红色 GaInP QW 激光器 (4 × 500 µm)，在 ~660 nm 处的 Ith 为 118 mA，ηd 为 18.7%/facet。相邻的 InGaN/GaN LED 发射波长为 446 nm。
Arrays of integrated red, infrared and blue light emitters fabricated using wafer fusion of GaAs-based laser structures to GaN-based light-emitting diode (LED) heterostructures are demonstrated. Successful operation of red and infrared lasers fused to functioning GaN LEDs has been achieved. Infrared, AlGaInAs QW lasers (4 × 500 µm) operating with a threshold current (Ith) of 40 mA and external differential quantum efficiency (ηd) of 11.5%/facet at ~821 nm are shown. Red, GaInP QW lasers (4 × 500 µm) operating with an Ith of 118 mA and ηd of 18.7%/facet at ~660 nm are also shown. The adjacent InGaN/GaN LED emits at 446 nm.