Epitaxial Growth Processes of Graphene on Silicon Substrates
Epitaxial Growth Processes of Graphene on Silicon Substrates
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DOI：
10.1143/jjap.49.01ah03
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发表时间：
2010-01-01
影响因子：
1.5
通讯作者：
Suemitsu, Maki
中科院分区：
文献类型：
--
作者：
Fukidome, Hirokazu;Miyamoto, Yu;Suemitsu, Maki
在硅衬底上通过SiC薄膜外延生长少层石墨烯。我们已经进行了详细的结构表征的硅上石墨烯（GOS）材料的拉曼光谱和透射电子显微镜，以获得深入了解工艺参数对缺陷形成的影响。结果表明，石墨烯中的缺陷优先停留在步骤。因此，在石墨烯生长之前，SiC表面的未来平坦化有望有助于GOS质量的改善。(C)2010日本应用物理学会
Few-layers graphene is epitaxially grown on silicon substrates via SiC thin films inserted in between. We have conducted a detailed structural characterization of this graphene-on-silicon (GOS) material by Raman spectroscopy and transmission-electron microscopy, to obtain insights into the impacts of process parameters on defect formation. Results suggest that defects in graphene preferentially dwell at steps. Future flattening of the SiC surface, prior to graphene growth, is thus expected to contribute to the improvement of GOS quality. (C) 2010 The Japan Society of Applied Physics