Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
Plasma-enhanced atomic layer deposition of Ta and Ti for interconnect diffusion barriers
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DOI：
10.1116/1.1305809
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发表时间：
2000-08
影响因子：
1.4
通讯作者：
S. Rossnagel;A. Sherman;F. Turner
中科院分区：
文献类型：
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作者：
S. Rossnagel;A. Sherman;F. Turner
惰性耐火材料薄膜在半导体互连应用中用作扩散阻挡层、种子层和粘附层。一个典型的例子是在电介质沟槽或通孔的壁上使用薄的保形 Ta 或 Ti/TiN 薄膜，这减少或消除了初级导体（通常是 Cu）到电介质中的外扩散。原子层沉积是一种已知的技术，其本质上是共形的并且适合于该应用。该工艺的等离子体增强允许在比传统化学气相沉积低得多的温度下进行沉积，这是低 k 电介质的要求。使用 ALD 以 TaCl5 前驱体和原子氢作为反应物种，以高达 1.67 Ang/cycle 的速率在 25–400 °C 下沉积的钽薄膜是非晶态、保形的，并显示出中等或可控水平的杂质；主要是氧气和少量的氯。使用 TiCl4 作为前体的 Ti 也观察到了类似的结果。该过程可扩展至...
Thin films of inert, refractory materials are used in semiconductor interconnect applications as diffusion barriers, seed, and adhesion layers. A typical example is the use of a thin, conformal Ta or Ti/TiN films on the walls of a dielectric trench or via which reduces or eliminates out-diffusion of the primary conductor, usually Cu, into the dielectric. Atomic layer deposition is a known technique which is intrinsically conformal and is appropriate for this application. Plasma enhancement of the process allows deposition at significantly lower temperatures than conventional chemical vapor deposition, which is a requirement for low-k dielectrics. Tantalum films deposited at 25–400 °C using ALD with a TaCl5 precursor and atomic hydrogen as the reactive species at up to a rate of 1.67 Ang/cycle are amorphous, conformal, and show moderate or controllable levels of impurities; primarily oxygen and a small level of Cl. Similar results have been observed for Ti using TiCl4 as a precursor. The process scales to ...