Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam
Scalable Fabrication of Single Silicon Vacancy Defect Arrays in Silicon Carbide Using Focused Ion Beam
复制标题
DOI：
10.1021/acsphotonics.7b00230
复制
发表时间：
2017-03
期刊：
影响因子：
7
通讯作者：
Junfeng Wang;Xiaoming Zhang;Yu Zhou;Ke Li;Ziyu Wang;P. Peddibhotla;Fucai Liu;S. Bauerdick;A. Rudzinski;Z. Liu;Wei‐bo Gao
中科院分区：
文献类型：
--
作者：
Junfeng Wang;Xiaoming Zhang;Yu Zhou;Ke Li;Ziyu Wang;P. Peddibhotla;Fucai Liu;S. Bauerdick;A. Rudzinski;Z. Liu;Wei‐bo Gao
在这项工作中，我们提出了一种使用聚焦离子束在碳化硅中进行可扩展、有针对性、无掩模制造单硅空位 (VSi) 缺陷阵列的方法。首先，我们研究了所产生的缺陷自旋系综的光致发光光谱和光学检测磁共振，确认合成的中心处于所需的缺陷状态。然后我们研究了单个 VSi 缺陷的荧光特性，我们的测量结果表明存在光稳定的单光子源。最后，我们发现 Si2+ 离子到 VSi 缺陷的转化率随着注入剂量的减少而增加。碳化硅中 VSi 缺陷的可靠产生可以为其在量子光子学和量子信息处理中的应用铺平道路。
In this work, we present a method for scalable, targeted, and maskless fabrication of single silicon vacancy (VSi) defect arrays in silicon carbide using focused ion beam. First, we studied the photoluminescence spectrum and optically detected magnetic resonance of the generated defect spin ensemble, confirming that the synthesized centers were in the desired defect state. Then we investigated the fluorescence properties of single VSi defects, and our measurements indicate the presence of a photostable single-photon source. Finally, we find that the Si2+ ion to VSi defect conversion yield increases as the implanted dose decreases. The reliable production of VSi defects in silicon carbide could pave the way for its applications in quantum photonics and quantum information processing.