Low-voltage GaN:Er green electroluminescent devices
Low-voltage GaN:Er green electroluminescent devices
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低压GaN:Er绿色电致发光器件
DOI：
10.1063/1.126033
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发表时间：
2000
期刊：
影响因子：
--
通讯作者：
A. Steckl
中科院分区：
文献类型：
--
作者：
J. Heikenfeld;Dong‐Seon Lee;M. Garter;R. Birkhahn;A. Steckl
在Si（111）衬底上用固体源分子束外延生长了掺Er的GaN电致发光器件（ELD），在低至5 V的偏压下测量了器件的绿色发光。我们已经实现了这种低电压操作（光学开启电压降低十倍），通过使用重掺杂（10.01 Ω cm）的Si衬底，并通过减少GaN-Er层的厚度到几百纳米。 提出了一种简单的铟锡氧化物/GaN-Er/Si/Al电致发光器件模型。这项工作证明了Er 3+发光中心的电压激发效率和GaN稀土掺杂ELD与低压驱动电路的兼容性。
Green light emission has been measured from Er-doped GaN electroluminescent devices (ELDs) at an applied bias as low as 5 V. The GaN–Er ELDs were grown by solid source molecular beam epitaxy on Si (111) substrates. We have achieved this low-voltage operation (ten-fold reduction in optical turn-on voltage) by using heavily doped (∼0.01 Ω cm) Si substrates and by decreasing the GaN–Er layer thickness to several hundred nanometers. A simple device model is presented for the indium tin oxide/GaN–Er/Si/Al ELD. This work demonstrates the voltage excitation efficiency of Er3+ luminescent centers and the compatibility of GaN rare earth-doped ELDs with low-voltage drive circuitry.