Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application
Ge/Sb2Te3 nanocomposite multilayer films for high data retention phase-change random access memory application
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DOI：
10.1016/j.apsusc.2010.07.099
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发表时间：
2010-11
影响因子：
6.7
通讯作者：
Changzhou Wang;J. Zhai;Zhitang Song;F. Shang;X. Yao
中科院分区：
文献类型：
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作者：
Changzhou Wang;J. Zhai;Zhitang Song;F. Shang;X. Yao
利用原位温度相关薄膜电阻测量技术研究了不同Ge/Sb 2 Te 3厚度比的Ge/Sb 2 Te 3纳米复合多层膜的非晶-晶转变。多层膜的晶化温度和晶化激活能随着Ge与Sb 2 Te 3厚度比的增加而增加。非晶态和晶态之间的薄层电阻差异可高达104Ω/□。Ge/Sb 2 Te 3纳米复合多层膜的晶化温度和晶化激活能均高于传统的Ge 2Sb 2 Te 5薄膜，这为相变存储器（PCRAM）提供了更好的数据保持能力。非晶态[Ge（2nm）/Sb 2 Te 3（3 nm）] 40膜的10年数据保持温度估计为165 ℃。透射电子显微镜（TEM）结果表明，Ge/Sb 2 Te 3纳米复合多层膜具有层状结构，界面清晰。
The amorphous-to-crystalline transition of Ge/Sb2Te3nanocomposite multilayer films with various thickness ratios of Ge to Sb2Te3were investigated by utilizing in situ temperature-dependent film resistance measurements. The crystallization temperature and activation energy for the crystallization of the multilayer films increased with the increase in thickness ratio of Ge to Sb2Te3. The difference in sheet resistance between amorphous and crystalline states could reach as high as 104Ω/□. The crystallization temperature and activation energy for the crystallization of Ge/Sb2Te3nanocomposite multilayer films was proved to be larger than that of conventional Ge2Sb2Te5film, which ensures a better data retention for phase-change random access memory (PCRAM) use. A data retention temperature for 10 years of the amorphous state [Ge (2nm)/Sb2Te3(3nm)]40film was estimated to be 165°C. Transmission electron microscopy (TEM) images revealed that Ge/Sb2Te3nanocomposite multilayer films had layered structures with clear interfaces.