Phonon coupling and shallow defects in CuInS2
Phonon coupling and shallow defects in
CuInS2
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CuInS2 中的声子耦合和浅缺陷
DOI：
10.1103/physrevb.101.085119
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发表时间：
2020
影响因子：
3.7
通讯作者：
S. Siebentritt
中科院分区：
文献类型：
--
作者：
A. Lomuscio;Mohit Sood;M. Melchiorre;S. Siebentritt
$\mathrm{Cu}（\mathrm{In}，\mathrm{Ga}）{\mathrm{S}}_{2}$是一种新兴的太阳能电池材料，效率已经达到15%以上。对于任何太阳能电池材料，了解其缺陷的复合过程和掺杂行为都是至关重要的。因此，在本工作中，我们提出了详细的光致发光和导纳研究多晶$\mathrm{CuIn}{\mathrm{S}}_{2}$薄膜研究浅本征缺陷。我们发现两个受体，105和145毫电子伏的价带，其优势取决于铜过剩，加上一个施主，30毫电子伏的导带的证据。我们样品的高结晶和电子质量允许检测低强度发光峰。基于这些发射，我们可以分析所观察到的缺陷的声子耦合，并表明，先前归因于第二施主的发射实际上是第一施主-受主跃迁的声子副本。
$\mathrm{Cu}(\mathrm{In},\mathrm{Ga}){\mathrm{S}}_{2}$ is an emerging material for solar cells, reaching already efficiencies above 15%. For any solar cell material, it is essential to understand the recombination processes and doping behavior of its defects. Therefore, in this work, we present a detailed photoluminescence and admittance investigation of polycrystalline $\mathrm{CuIn}{\mathrm{S}}_{2}$ thin films to study the shallow intrinsic defects. We find evidence for two acceptors, 105 and 145 meV from the valence band, their predominance depending on the Cu excess, plus one donor, 30 meV from the conduction band. The high crystalline and electronic quality of our samples allows the detection of low intensity luminescence peaks. Based on these emissions we can analyze the phonon coupling of the observed defects and show that an emission previously attributed to a second donor is in fact a phonon replica of the first donor-acceptor transition.