Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
Ultraviolet electroluminescence from ordered ZnO nanorod array/p-GaN light emitting diodes
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DOI：
10.1063/1.4706259
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发表时间：
2012-04-23
影响因子：
4
通讯作者：
Liu, X.
中科院分区：
文献类型：
--
作者：
Dong, J. J.;Zhang, X. W.;Liu, X.
采用倒置自组装单层模板辅助水热法在p-GaN衬底上生长了高度有序的ZnO纳米棒阵列，并以此制备了ZnO纳米棒/p-GaN异质结发光二极管（LED）。基于ZnO纳米棒的LED表现出比基于ZnO膜的对应物更强的390 nm的紫外发射，这归因于低密度的界面缺陷、提高的光提取效率以及通过纳米尺寸的结的载流子注入效率。此外，采用300 nm ZnO纳米棒的LED比采用500 nm ZnO纳米棒的LED具有更好的电致发光性能。(C)2012年美国物理学会。[http：//dx.doi.org/10.1063/1.4706259]
The highly ordered and aligned ZnO nanorod arrays were grown on p-GaN substrates via a facile hydrothermal process assisted by the inverted self-assembled monolayer template, from which the ZnO nanorod/p-GaN heterojunction light emitting diodes (LEDs) were fabricated. The ZnO nanorod-based LEDs exhibit a stronger ultraviolet emission of 390 nm than the ZnO film-based counterpart, which is attributed to the low density of interfacial defects, the improved light extraction efficiency, and carrier injection efficiency through the nano-sized junctions. Furthermore, the LED with the 300 nm ZnO nanorods has a better electroluminescence performance compared with the device with the 500 nm nanorods. (C) 2012 American Institute of Physics. [http://dx.doi.org/10.1063/1.4706259]